Au-Ge-Ni-Ti Ohmic Contacts on Gallium Arsenide
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چکیده
منابع مشابه
Characterization of Pd/Ni/Au ohmic contacts on p-GaN
A low-resistance ohmic contact to Mg-doped p-type GaN grown by metal-organic chemical vapor deposition (MOCVD) with a carrier concentration of 2 · 10 cm 3 using Pd/Ni/Au metallization was formed. An anneal at 500 C for 1 min in a flowing N2 ambient produced an excellent ohmic contact with a specific contact resistivity as low as 2.4 · 10 5 X cm. X-ray photoelectron spectroscopy (XPS) and Auger ...
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ژورنال
عنوان ژورنال: MRS Proceedings
سال: 1990
ISSN: 0272-9172,1946-4274
DOI: 10.1557/proc-181-363